savantic semiconductor product specification silicon npn power transistors BUX81 d escription with to-3 package high voltage ;fast switching speed low saturation voltage applications switching-mode power supplies ,crt scanning,inverters,and other industrial applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1000 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 10 v i c collector current 10 a i cm collector current-peak 15 a i b base current 4 a i bm base current-peak 6 a p t total power dissipation t c =25 150 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.17 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUX81 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; l=25mh 450 v v cesat-1 collector-emitter saturation voltage i c =5 a;i b =1 a 1.5 v v cesat-2 collector-emitter saturation voltage i c =8 a;i b =2.5 a 3.0 v v besat-1 base-emitter saturation voltage i c =5 a;i b =1 a 1.4 v v besat-2 base-emitter saturation voltage i c =8 a;i b =2.5 a 1.8 v i ces collector cut-off current v ce =1000v;v be =0 t c =125 1.0 3.0 ma i ebo emitter cut-off current v eb =10v; i c =0 10 ma h fe dc current gain i c =1.2a ; v ce =5v 20 f t transition frequency i c =0.5a ; v ce =10v 8 mhz c ob output capacitance i e =0 ; v cb =20v;f=0.1mhz 105 pf switching times t on turn-on time 0.5 s t s storage time 3.5 s t f fall time i c =5a ;i b1 =1a; i b2 =-2a v cc =250v 0.8 s
savantic semiconductor product specification 3 silicon npn power transistors BUX81 package outline fig.2 outline dimensions
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